Patent Number: 7,612,970

Title: Magnetoresistive sensor with a free layer stabilized by direct coupling to in stack antiferromagnetic layer

Abstract: A magnetoresistive sensor having a free layer biased by an in stack bias layer that comprises a layer of antiferromagnetic material. The bias layer can be IrMnCr, IrMn or some other antiferromagnetic material. The free layer is a synthetic free layer having first and second magnetic layers antiparallel coupled across an AP coupling layer. The first magnetic layer is disposed adjacent to a spacer or barrier layer and the second magnetic layer is exchange coupled with the IrMnCr bias layer. The bias layer biases the magnetic moments of the free layer in desired directions parallel with the ABS without pinning the magnetic moments of the free layer.

Inventors: Gill; Hardayal Singh (Palo Alto, CA), Ho; Kuok San (Santa Clara, CA)

Assignee: Hitachi Global Storage Technologies Netherlands B.V.

International Classification: G11B 5/39 (20060101)

Expiration Date: 1/03/02017