Patent Number: 7,613,868

Title: Method and system for optimizing the number of word line segments in a segmented MRAM array

Abstract: A method and system for programming and reading a magnetic memory is disclosed. The magnetic memory includes a plurality of selectable word line segments and a plurality of magnetic storage cells corresponding to each word line segment. The method and system include reading the magnetic storage cells corresponding to a word line segment to determine a state of each magnetic storage cell. The method and system also include writing data to a portion of the magnetic cells corresponding to the word line segment after the reading. The method and system also include rewriting the state to each of a remaining portion of the magnetic storage cells corresponding to the word line segments at substantially the same time as the portion of the magnetic cells are written.

Inventors: Yang; Hsu Kai (Karl) (Pleasanton, CA), Shi; Xizeng (Fremont, CA), Wang; Po-Kang (San Jose, CA), Yang; Bruce Yee (Pleasanton, CA)

Assignee: Headway Technologies, Inc.

International Classification: G06F 13/16 (20060101); G11C 11/15 (20060101)

Expiration Date: 1/03/02017