Patent Number: 7,614,034

Title: Method and apparatus for generating OPC rules for placement of scattering bar features utilizing interface mapping technology

Abstract: A method of applying optical proximity correction features to a mask having a plurality of features to be imaged. The method includes the steps of defining a set of process parameters to be utilized to image the mask; defining a set of pitch ranges corresponding to pitches exhibited by the plurality of features to be imaged; determining an interference map for at least one of the pitch ranges; and generating a set of rules for positioning scattering bars adjacent the plurality of features based on the interference map, where the set of rules governs scattering bar placement for features having a pitch which falls within the pitch range utilized to generate the interference map.

Inventors: Van Den Broeke; Douglas (Sunnyvale, CA), Park; Sangbong (Union City, CA), Hsu; Chung-Wei (Taipei, TW), Chen; Jang Fung (Cupertino, CA)

Assignee: ASML Masktools B.V.

International Classification: G06F 17/50 (20060101); G03F 1/00 (20060101)

Expiration Date: 1/03/02017