Patent Number: 7,632,375

Title: Electrically enhancing the confinement of plasma

Abstract: A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.

Inventors: Kuthi; Andras (Thousand Oaks, CA), Kim; Jisoo (Pleasanton, CA), Lenz; Eric (Pleasanton, CA), Dhindsa; Rajindar (San Jose, CA), Li; Lumin (Fremont, CA), Sadjadi; Reza (Saratoga, CA)

Assignee: Lam Research Corporation

International Classification: C23F 1/00 (20060101); H01L 21/306 (20060101)

Expiration Date: 2/15/02018