Patent Number: 7,707,707

Title: Method for providing a temporary deep shunt on wafer structures for electrostatic discharge protection during processing

Abstract: A method of temporarily protecting an electrically sensitive component from damage due to electrostatic discharge includes defining a shunt having first and second leads electrically connected in parallel with the component and separated by a gap. A portion of a shield layer is deposited to form the shunt between the first and second leads to span the gap therebetween and form a shunted assembly. The shunted assembly and component are lapped to form the ABS at the location of the component, a sacrificial carbon overcoat is deposited on the ABS, and additional processing is performed on the shunted assembly. A portion of the shunted assembly, the shunt, and portions of the sacrificial carbon overcoat are then removed to form an electrical open for an unshunted assembly having ABS features comprising an air bearing cavity/deep gap at a former location of the shunted assembly.

Inventors: Seagle; David John (Morgan Hill, CA)

Assignee: Hitachi Global Storage Technologies Netherlands B.V.

International Classification: G11B 5/23 (20060101)

Expiration Date: 5/04/12018