Patent Number: 7,708,831

Title: Process for producing ZnO single crystal according to method of liquid phase growth

Abstract: A method for producing a ZnO single crystal by a liquid phase growth technique, comprising the steps of: mixing and melting ZnO as a solute and PbF.sub.2 and PbO as solvents; and putting a seed crystal or substrate into direct contact with the obtained melted solution, thereby growing a ZnO single crystal on the seed crystal or substrate.

Inventors: Sekiwa; Hideyuki (Tokyo, JP), Kobayashi; Jun (Tokyo, JP), Miyamoto; Miyuki (Tokyo, JP)

Assignee: Mitsubishi Gas Chemical Company, Inc.

International Classification: C30B 19/00 (20060101); C30B 11/00 (20060101); C30B 28/10 (20060101)

Expiration Date: 5/04/12018