Patent Number: 7,709,337

Title: Method for manufacturing SOI substrate and semiconductor device

Abstract: It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

Inventors: Jinbo; Yasuhiro (Kanagawa, JP), Shoji; Hironobu (Tochigi, JP), Ohnuma; Hideto (Kanagawa, JP), Yamazaki; Shunpei (Tokyo, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/331 (20060101); H01L 21/8222 (20060101)

Expiration Date: 5/04/12018