Patent Number: 7,709,360

Title: Method for manufacturing a crystalline silicon layer

Abstract: A method of forming a crystalline silicon layer on a microrough face of a substrate by reducing the microroughness of the face and then performing a metal induced crystallization process on the face is disclosed. The method further comprises, after metal induced crystallization and before removing the metal layer, removing silicon islands using the metal layer as a mask.

Inventors: Van Gestel; Dries (Vosselaar, BE)

Assignee: IMEC

International Classification: H01L 21/20 (20060101); H01L 21/36 (20060101)

Expiration Date: 5/04/12018