Patent Number: 7,709,362

Title: Method for introducing impurities and apparatus for introducing impurities

Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Inventors: Sasaki; Yuichiro (Machida, JP), Mizuno; Bunji (Ikoma, JP), Jin; Cheng-Guo (Hirakata, JP)

Assignee: Panasonic Corporation

International Classification: H01L 21/265 (20060101)

Expiration Date: 5/04/12018