Patent Number: 7,709,385

Title: Method for depositing tungsten-containing layers by vapor deposition techniques

Abstract: In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.

Inventors: Xi; Ming (Milpitas, CA), Sinha; Ashok (Palo Alto, CA), Kori; Moris (Palo Alto, CA), Mak; Alfred W. (Union City, CA), Lu; Xinliang (Sunnyvale, CA), Lai; Ken Kaung (Milpitas, CA), Littau; Karl A. (Palo Alto, CA)

Assignee: Applied Materials, Inc.

International Classification: H01L 21/44 (20060101)

Expiration Date: 5/04/12018