Patent Number: 7,709,397

Title: Method and system for etching a high-k dielectric material

Abstract: A method for etching a high-k dielectric layer on a substrate in a plasma processing system is described. The high-k dielectric layer can, for example, comprise HfO.sub.2. The method comprises elevating the temperature of the substrate above 200.degree. C. (i.e., typically of order 400.degree. C.), introducing a process gas comprising a halogen-containing gas, igniting a plasma from the process gas, and exposing the substrate to the plasma. The process gas can further include a reduction gas in order to improve the etch rate of HfO.sub.2 relative to Si and SiO.sub.2.

Inventors: Chen; Lee (Cedar Creek, TX), Kambara; Hiromitsu (Austin, TX), Iwama; Nobuhiro (Lexington, MA), Ko; Akiteru (Beverly, MA), Mochiki; Hiromasa (Kofu, JP), Hagihara; Masaaki (Beverly, MA)

Assignee: Tokyo Electron Limited

International Classification: H01L 21/302 (20060101)

Expiration Date: 5/04/12018