Patent Number: 7,709,795

Title: Infrared sensor unit and process of fabricating the same

Abstract: An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate. A dielectric top layer covers the substrate to conceal the semiconductor device formed in the top surface of the substrate. The thermal infrared sensor carried on a sensor mount which is supported above the semiconductor device by means of a thermal insulation support. The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.

Inventors: Yamanaka; Hiroshi (Moriguchi, JP), Ichihara; Tsutomu (Hirakata, JP), Watabe; Yoshifumi (Tondabayashi, JP), Tsuji; Koji (Suita, JP), Kirihara; Masao (Kadoma, JP), Yoshihara; Takaaki (Osaka, JP), Nishijima; Yoichi (Osaka, JP), Hyodo; Satoshi (Ashiya, JP)

Assignee: Panasonic Electric Works Co., Ltd.

International Classification: G01J 5/20 (20060101)

Expiration Date: 5/04/12018