Patent Number: 7,709,824

Title: AC-driven light emitting device having single active layer structure and manufacturing method thereof

Abstract: The present invention relates to an AC voltage-driven light emitting device having a single active layer of a core-shell structure (p-i-n structure) in which intrinsic semiconductor nanocrystals, exciton combination centers, are uniformly and isotropically distributed around p-type polymer particles, and n-type small molecular particles surround the semiconductor nanocrystals and p-type polymer, and a manufacturing method thereof. An active layer of a core-shell structure using a polymer-semiconductor nano hybrid in the light-emitting device has an inversion symmetry characteristic showing the same current-voltage characteristic during application of a voltage in a forward direction and a reverse direction. Therefore, due to this inversion symmetry characteristic, the light emitting can be driven by even an AC voltage. Also, since the device can be driven by an AC voltage, limitations of an existing DC voltage-driven organic light emitting diode, that is, destruction or a defect of the device by an overcurrent and generation of a dark spot by degradation of local constituent organic materials are solved.

Inventors: Choi; Won Kook (Seoul, KR), Park; Dong Hee (Seoul, KR), Ie; Sang Yub (Goyang-si, KR), Son; Dong Ick (Seoul, KR), Choi; Ji Won (Seoul, KR)

Assignee: Korea Institute of Science and Technology

International Classification: H01L 29/06 (20060101)

Expiration Date: 5/04/12018