Patent Number: 7,709,837

Title: Semiconductor device and its manufacturing method

Abstract: Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm.sup.2/Vs and an S value smaller than 100 mV/dec. can be obtained.

Inventors: Yamazaki; Shunpei (Setagaya-ku, JP), Teramoto; Satoshi (Atsugi, JP), Koyama; Jun (Sagamihara, JP), Ogata; Yasushi (Atsugi, JP), Hayakawa; Masahiko (Atsugi, JP), Osame; Mitsuaki (Atsugi, JP), Ohtani; Hisashi (Isehara, JP), Hamatani; Toshiji (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd

International Classification: H01L 31/06 (20060101)

Expiration Date: 5/04/12018