Patent Number: 7,709,844

Title: Semiconductor device equipped with semiconductor circuits composed of semiconductor elements and processes for production thereof

Abstract: A semiconductor device and a process for production thereof, said semiconductor device having a new electrode structure which has a low resistivity and withstands heat treatment at C. and above. Heat treatment at a high temperature ( C.) is possible because the wiring is made of Ta film or Ta-based film having high heat resistance. This heat treatment permits the gettering of metal element in crystalline silicon film. Since this heat treatment is lower than the temperature which the gate wiring (0.1-5 .mu.m wide) withstands and the gate wiring is protected with a protective film, the gate wiring retains its low resistance.

Inventors: Yamazaki; Shunpei (Setagaya, JP), Fujimoto; Etsuko (Atsugi, JP), Isobe; Atsuo (Atsugi, JP), Takayama; Toru (Atsugi, JP), Fukuchi; Kunihiko (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd

International Classification: H01L 27/14 (20060101)

Expiration Date: 5/04/12018