Patent Number: 7,709,862

Title: Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Inventors: Nonaka; Ken-ichi (Wako, JP), Hashimoto; Hideki (Wako, JP), Yokoyama; Seiichi (Wako, JP), Iwakuro; Hiroaki (Hanno, JP), Nishikawa; Koichi (Hanno, JP), Shimizu; Masaaki (Hanno, JP), Fukuda; Yusuke (Hanno, JP)

Assignee: Honda Motor Co., Ltd.

International Classification: H01L 29/76 (20060101)

Expiration Date: 5/04/12018