Patent Number: 7,709,866

Title: Method for forming semiconductor contacts

Abstract: In one embodiment of the invention, contact patterning may be divided into two or more passes which may allow designers to control the gate height critical dimension relatively independent from the contact top critical dimension.

Inventors: Rahhal-Orabi; Nadia (Hillsboro, OR), Wallace; Charles H. (Portland, OR), Davis; Alison (Hillsboro, OR), Sivakumar; Swaminathan (Portland, OR)

Assignee: Intel Corporation

International Classification: H01L 29/51 (20060101); H01L 21/469 (20060101)

Expiration Date: 5/04/12018