Patent Number: 7,709,871

Title: CMOS image sensor and method for manufacturing the same

Abstract: A CIS and a method for manufacturing the same are provided. The CIS includes an interlayer insulation layer formed on a substrate having a photodiode and a transistor formed thereon; a plurality of color filters formed on the interlayer insulation layer and spaced a predetermined interval apart from each other; a metal sidewall formed to fill the predetermined interval between the plurality of the color filters; and a microlens formed on each of the plurality of color filters.

Inventors: Hwang; Joon (Cheongju-si, KR)

Assignee: Dongbu Electronics Co., Ltd.

International Classification: H01L 31/062 (20060101)

Expiration Date: 5/04/12018