Patent Number: 7,709,891

Title: Component arrangement including a power semiconductor component having a drift control zone

Abstract: A component arrangement. One embodiment includes a power semiconductor component having a drift zone arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. A capacitive storage arrangement is coupled to the drift control zone. A charging circuit is coupled between the first component zone and the capacitive storage arrangement.

Inventors: Mauder; Anton (Kolbermoor, DE), Sedlmaier; Stefan (Munich, DE), Hirler; Franz (Isen, DE), Willmeroth; Armin (Augsburg, DE), Noebauer; Gerhard (Villach, AT)

Assignee: Infineon Technologies AG

International Classification: H01L 29/76 (20060101)

Expiration Date: 5/04/12018