Patent Number: 7,710,768

Title: Electromechanical memory, electric circuit using the same, and method of driving electromechanical memory

Abstract: A memory element which has high affinity with a conventional semiconductor process, which has a switching function of completely interrupting electric conduction paths by in a mechanical manner, and in which nonvolatile information recording is enabled is realized. An electromechanical memory which is formed on a substrate, which is formed by interposing a memory cell by electrodes, and which has a movable electrode that is a beam stretched in the air via a post portion is realized. According to the configuration, a nonvolatile memory can be realized by a simple structure, and it is possible to realize a high-performance electromechanical memory which is conventionally difficult to be realized, and in which the power consumption is low and the cost is low, and an electric apparatus using it.

Inventors: Naito; Yasuyuki (Osaka, JP)

Assignee: Panasonic Corporation

International Classification: G11C 11/50 (20060101)

Expiration Date: 5/04/12018