Patent Number: 7,712,676

Title: Device, and method for manufacturing the same

Abstract: In a method for manufacturing a flexible memory device and semiconductor device, a stack including an element layer and an insulating layer which seals the element layer is formed over a substrate having a separation layer, and the stack is separated from the separation layer. The element layer includes a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, and at least one of the pair of electrode layers is formed using an alloy layer containing tin. The flexible memory device and semiconductor device include a memory element having a layer containing an organic compound between a pair of electrodes, a first electrode layer and a second electrode layer, in which at least one of the pair of electrode layers is formed using an alloy layer containing tin.

Inventors: Yukawa; Mikio (Kanagawa, JP), Sugisawa; Nozomu (Kanagawa, JP), Nagata; Takaaki (Kanagawa, JP), Yoshitomi; Shuhei (Kanagawa, JP), Aizawa; Michiko (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd

International Classification: G06K 21/06 (20060101)

Expiration Date: 5/11/12018