Patent Number: 7,713,761

Title: Doping apparatus, doping method, and method for fabricating thin film transistor

Abstract: It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.

Inventors: Koezuka; Junichi (Kanagawa, JP), Yamade; Naoto (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: G01R 31/26 (20060101); H01L 21/66 (20060101)

Expiration Date: 5/11/12018