Patent Number: 7,713,765

Title: Optical semiconductor device and method for manufacturing the same

Abstract: A method for manufacturing a semiconductor device having a compound semiconductor layer that is provided on a substrate and includes a cladding layer of a first conductivity type, an activation layer, a cladding layer of a second conductivity type that is the opposite of the first conductivity type, includes the steps of: forming a diffusion source layer on the compound semiconductor layer; forming a first diffusion region in the compound semiconductor layer by carrying out a first heat treatment, so that the first diffusion region includes a light emitting facet for emitting light from the activation layer; removing the diffusion source layer; forming a first SiN film having a refractive index of 1.9 or higher on the compound semiconductor layer; and turning the first diffusion region into the second diffusion region by carrying out a second heat treatment.

Inventors: Sakashita; Takeshi (Kanagawa, JP), Saito; Masanori (Yamanashi, JP)

Assignee: Eudyna Devices Inc.

International Classification: H01L 21/00 (20060101)

Expiration Date: 5/11/12018