Patent Number: 7,713,818

Title: Double patterning method

Abstract: A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, and etching the underlying layer using both the first and the second photoresist patterns as a mask.

Inventors: Chan; Michael (Mountain View, CA)

Assignee: SanDisk 3D, LLC

International Classification: H01L 21/336 (20060101)

Expiration Date: 5/11/12018