Patent Number: 7,713,836

Title: Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device

Abstract: A separation layer is formed over a substrate having a depressed portion, using a silane coupling agent; a conductive layer and an insulating layer that covers the conductive layer are formed in the depressed portion over the separation layer; and a sticky member is attached to the insulating layer, then the conductive layer and the insulating layer are separated from the substrate. Alternatively, after these steps, a flexible substrate is attached to the conductive layer and the insulating layer.

Inventors: Aoki; Tomoyuki (Tochigi, JP), Tsurume; Takuya (Tochigi, JP), Yamada; Daiki (Tochigi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/30 (20060101)

Expiration Date: 5/11/12018