Patent Number: 7,713,837

Title: Low temperature fusion bonding with high surface energy using a wet chemical treatment

Abstract: Described is a wet chemical surface treatment involving NH.sub.4OH that enables extremely strong direct bonding of two wafer such as semiconductors (e.g., Si) to insulators (e.g., SiO.sub.2) at low temperatures (less than or equal to 400.degree. C.). Surface energies as high as .about.4835.+-.675 mJ/m.sup.2 of the bonded interface have been achieved using some of these surface treatments. This value is comparable to the values reported for significantly higher processing temperatures (less than 1000.degree. C.). Void free bonding interfaces with excellent yield and surface energies of .about.2500 mJ/m.sup.2 have also be achieved herein.

Inventors: Chan; Kevin K. (Staten Island, NY), Guarini; Kathryn Wilder (Yorktown Heights, NY), Jones; Erin C. (Corvallis, OR), Saavedra, Jr.; Antonio F. (Gainesville, FL), Shi; Leathen (Yorktown Heights, NY), Singh; Dinkar V. (White Plains, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/30 (20060101)

Expiration Date: 5/11/12018