Patent Number: 7,713,843

Title: Method for fabricating optical semiconductor device

Abstract: In the method of fabricating an optical semiconductor device, a semiconductor layer is formed on an InP region, and includes semiconductor films. A first etching mask is formed on the semiconductor layer. The semiconductor layer is etched through the first etching mask to form a semiconductor mesa and a first marking mesa, each mesa includes an active layer and an InP cladding layer, the InP cladding layer being provided on the active layer. The active layer is made of semiconductor material different from InP. An InP burying region is grown through the first etching mask on a side of the semiconductor mesa and a side of the first marking mesa to bury the semiconductor mesa and the first marking mesa. A second etching mask is formed on the InP burying region after removing the first etching mask, and has an opening located above the first marking mesa. InP in the InP burying region and the first marking mesa is etched through the second etching mask to form a second marking mesa. The alignment mark includes the second marking mesa, and the active layer is exposed on the top of the second marking mesa.

Inventors: Narita; Masakazu (Yokohama, JP)

Assignee: Sumitomo Electric Industries Ltd.

International Classification: H01L 21/46 (20060101); H01L 21/301 (20060101); H01L 21/78 (20060101)

Expiration Date: 5/11/12018