Patent Number: 7,713,848

Title: Method for re-crystallization of layer structures by means of zone melting, a device for this purpose and use thereof

Abstract: The invention relates to a method for re-crystallization of layer structures by means of zone melting, in which, as a result of convenient arrangement of a plurality of heat sources, a significant acceleration of the zone melting method can be achieved. The method is based on the fact that a continuous recrystallisation of the layer is ensured as a result of overlaps being produced. According to the invention, a device is likewise provided with which the method according to the invention can be achieved. The method according to the invention is used in particular in the production of crystalline silicon thin layer solar cells or for example in SOI technology. However the application likewise relates also in general to the processing of metals, plastic materials or adhesives and here in particular to the production of thin layers.

Inventors: Reber; Stefan (Gundelfingen, DE), Eyer; Achim (Freiburg, DE), Haas; Fridolin (Kirchzarten, DE)

Assignee: Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.

International Classification: H01L 21/20 (20060101)

Expiration Date: 5/11/12018