Patent Number: 7,714,360

Title: Surface-stabilized semiconductor device

Abstract: A high electron mobility transistor is disclosed which has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source, drain, and gate overlie the electron supply layer. Also formed on the electron supply layer is a surface-stabilizing organic semiconductor overlay which is of p conductivity type in contrast to the n type of the electron supply layer.

Inventors: Otsuka; Koji (Niiza, JP), Machida; Osamu (Niiza, JP), Murofushi; Hitoshi (Niiza, JP)

Assignee: Sanken Electric Co., Ltd.

International Classification: H01L 21/338 (20060101); H01L 29/778 (20060101); H01L 29/812 (20060101)

Expiration Date: 5/11/12018