Patent Number: 7,714,373

Title: Semiconductor device and method of manufacturing the same

Abstract: There is disclosed a semiconductor device including a plurality of memory cell transistors, each memory cell transistor including a floating gate electrode isolated from each other via an isolation insulating film every memory cell transistor, an inter-electrode insulating film comprising a Hf.sub.xAl.sub.1-xO.sub.y film (0.8.ltoreq.x.ltoreq.0.95) formed on the floating gate electrode, and a control gate electrode formed on the inter-electrode insulating film, wherein the memory cell transistors are arrayed to form a memory cell array.

Inventors: Natori; Katsuaki (Yokohama, JP), Tanaka; Masayuki (Yokohama, JP), Sekine; Katsuyuki (Yokohama, JP), Ishida; Hirokazu (Yokohama, JP), Matsuzaki; Masumi (Yokohama, JP), Ozawa; Yoshio (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/788 (20060101)

Expiration Date: 5/11/12018