Patent Number: 7,714,383

Title: Semiconductor device

Abstract: A semiconductor device includes: a semiconductor layer, a first semiconductor region provided on a major surface of the semiconductor layer, a second semiconductor region provided in a surface portion of the first semiconductor region, a trench extending through the second semiconductor region and the first semiconductor region to the semiconductor layer, a first insulating film provided on an inner wall of the trench, a third semiconductor region filling the trench below an interface between the semiconductor layer and the first semiconductor region, a second insulating film provided on the third semiconductor region, a gate electrode filling the trench above the second insulating film. A portion of the first insulating film in contact with the semiconductor layer is opened. The semiconductor layer is in contact with the third semiconductor region through the opened portion.

Inventors: Kawamura; Keiko (Kanagawa-ken, JP), Maeyama; Kenji (Kanagawa-ken, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H01L 29/94 (20060101)

Expiration Date: 5/11/12018