Patent Number: 7,714,407

Title: Semiconductor device and method of forming a semiconductor device

Abstract: A high voltage/power semiconductor device has a semiconductor layer having a high voltage terminal end and a low voltage terminal end. A drift region extends between the high and low voltage terminal ends. A dielectric layer is provided above the drift region. An electrical conductor extends across at least a part of the dielectric layer above the drift region, the electrical conductor being connected or connectable to the high voltage terminal end. The drift region has plural trenches positioned below the electrical conductor. The trenches extend laterally across at least a part of the drift region in the direction transverse the direction between the high and low voltage terminal ends of the semiconductor layer, each trench containing a dielectric material. The trenches improve the distribution of electric field in the device in the presence of the electrical conductor.

Inventors: Udrea; Florin (Cambridge, GB), Lee; Cerdin (Cambridge, GB)

Assignee: Cambridge Semiconductor Limited

International Classification: H01L 29/00 (20060101); H01L 21/8238 (20060101)

Expiration Date: 5/11/12018