Patent Number: 7,714,410

Title: Semiconductor device

Abstract: A semiconductor device includes: a semiconductor substrate that has an integrated circuit and an electrode, the electrode being electrically coupled to the integrated circuit; a resin layer that is formed on the semiconductor substrate, the resin layer having an upper surface and a lower surface, the upper surface and the lower surface opposing each other, the lower surface facing the substrate; and a spiral inductor that is formed on the upper surface of the resin layer with a spiral wiring line, the spiral inductor being electrically coupled to the electrode. The wiring line has both ends in a width direction intersecting an axial line spirally extending and a mid-portion between the both ends. At least a part of the mid-portion makes contact with the upper surface of the resin layer, and at least the both ends are positioned apart from the upper surface of the resin layer.

Inventors: Hanaoka; Terunao (Suwa, JP)

Assignee: Seiko Epson Corporation

International Classification: H01L 27/00 (20060101); H01F 5/00 (20060101)

Expiration Date: 5/11/12018