Patent Number: 7,714,435

Title: Semiconductor device and method for fabricating the same

Abstract: A method for fabricating a three dimensional type capacitor is provided. The method includes forming a first insulation layer including first contact layers over a substrate, forming a second insulation layer over the first insulation layer, forming second contact layers by using a material having an etch selectivity different from the first contact layers such that the second contact layers are connected with the first contact layers within the second insulation layer, forming an etch stop layer over the second insulation layer and the second contact layers, forming a third insulation layer over the etch stop layer, etching the third insulation layer and the etch stop layer to form first contact holes exposing the second contact layers, etching the exposed second contact layers to form second contact holes exposing the first contact holes, and forming bottom electrodes over the inner surface of the second contact holes.

Inventors: Lee; Sung-Kwon (Kyoungki-do, KR), Kim; Myung-Ok (Kyoungki-do, KR)

Assignee: Hynix Semiconductor Inc.

International Classification: H01L 23/48 (20060101)

Expiration Date: 5/11/12018