Patent Number: 7,715,225

Title: Memory cell using spin induced switching effects

Abstract: According to an embodiment, an integrated circuit includes a magneto-resistive memory cell. The magneto-resistive memory cell includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer being disposed between the first ferromagnetic layer and the second ferromagnetic layer. The integrated circuit further includes a programming circuit configured to route a programming current through the magneto-resistive memory cell, wherein the programming current programs the magnetizations of the first ferromagnetic layer and of the second ferromagnetic layer by spin induced switching effects.

Inventors: Raberg; Wolfgang (Sauerlach, DE), Klostermann; Ulrich (Munich, DE)

Assignee: Qimonda AG

International Classification: G11C 11/00 (20060101)

Expiration Date: 5/11/12018