Patent Number: 7,732,268

Title: Manufacturing method of display device

Abstract: A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.

Inventors: Shimmoto; Hideaki (Toyokawa, JP), Hongo; Mikio (Yokohoma, JP), Yazaki; Akio (Yokohama, JP), Noda; Takeshi (Mobara, JP), Kaitoh; Takuo (Mobara, JP)

Assignee: Hitachi Displays, Ltd.

International Classification: H01L 21/00 (20060101)

Expiration Date: 2022-06-08 0:00:00