Patent Number: 7,732,315

Title: Methods of fabricating semiconductor devices and structures thereof

Abstract: Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming a first insulating material over the semiconductor wafer, and forming a plurality of first features and a plurality of second features in the first insulating material. The plurality of first features is removed, leaving an unfilled pattern in the first insulating material. The unfilled pattern in the first insulating material is filled with a second insulating material.

Inventors: Kim; Sun-Oo (Hopewell Junction, NY), Kim; Yoon-Hae (Gyeonggi, KR)

Assignee: Infineon Technologies AG

International Classification: H01L 21/00 (20060101)

Expiration Date: 2022-06-08 0:00:00