Patent Number: 7,732,836

Title: Compound semiconductor epitaxial substrate and method for manufacturing the same

Abstract: In a compound semiconductor epitaxial substrate used for a strain channel high electron mobility field effect transistor which comprises an InGaAs layer as a channel layer 9 and AlGaAs layers containing n-type impurities as electron supplying layers 6 and 12, the channel layer 9 has an electron mobility at room temperature of 8300 cm.sup.2/Vs or more by adjusting an In composition of the InGaAs layer composing the channel layer 9 to 0.25 or more and optimizing the In composition and the thickness of the channel layer 9. GaAs layers 8 and 10 having a thickness of 4 nm or more each may be laminated respectively in contact with a top surface and a bottom surface of the channel layer 9.

Inventors: Osada; Takenori (Ichihara, JP), Nakano; Tsuyoshi (Ichihara, JP), Inoue; Takayuki (Sodegaura, JP)

Assignee: Sumitomo Chemical Company, Limited

International Classification: H01L 29/778 (20060101)

Expiration Date: 2022-06-08 0:00:00