Patent Number: 7,754,544

Title: Dynamic random access memory cell and manufacturing method thereof

Abstract: A dynamic random access memory cell and a manufacturing method thereof are provided. First, a substrate on which a bottom oxide layer and a semiconductor layer are formed is provided. The semiconductor layer is formed on the bottom oxide layer. Next, a gate is formed on the semiconductor layer. Then, the semiconductor layer is patterned to expose a portion of the bottom oxide layer. Afterwards, an insulation layer is formed at the side walls of the semiconductor layer, wherein the height of the insulation layer is shorter than that of the semiconductor layer, so that a gap is formed between the tops of the insulation layer and the semiconductor layer. Further, a doping layer covering the insulation layer and having the same height with the semiconductor layer is formed on the bottom oxide layer. The doping layer contacts the side walls of the semiconductor layer via the gap.

Inventors: Lin; Ta-Wei (Chiayi County, TW), Tsai; Wen-Jer (Hualien, TW)

Assignee: Macronix International Co., Ltd.

International Classification: H01L 21/8242 (20060101)

Expiration Date: 2022-07-13 0:00:00