Patent Number: 7,765,676

Title: Method for patterning a magnetoresistive sensor

Abstract: A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.

Inventors: Cyrille; Marie-Claire (San Jose, CA), Dobisz; Elizabeth Ann (San Jose, CA), Jayasekara; Wipul Pemsiri (Los Gatos, CA), Li; Jui-Lung (San Jose, CA)

Assignee: Hitachi Global Storage Technologies Netherlands B.V.

International Classification: G11B 5/187 (20060101); B44C 1/22 (20060101)

Expiration Date: 8/03/12018