Patent Number: 7,784,170

Title: Method for forming a resist pattern of magnetic device by etching with a gas cluster ion beam

Abstract: A resist pattern for lift-off is formed on a first film composed of one or more layers deposited on a substrate. The first film is patterned by dry-etching using the resist pattern as a mask. Subsequently, a second film is deposited with presence of the resist pattern on the first film. Then, the resist pattern for lift-off is removed for conducting lift-off. Subsequently, the resulting substrate is etched. In the etching, the substrate is dry-etched using etching particles which are oriented at an incident angle set in a range of 60 .degree. to 90 .degree. relative to the normal direction of the substrate.

Inventors: Kagami; Takeo (Tokyo, JP), Sato; Kazuki (Tokyo, JP)

Assignee: TDK Corporation

International Classification: G11B 5/127 (20060101); C03C 15/00 (20060101); G11B 5/33 (20060101)

Expiration Date: 8/31/12018