Patent Number: 7,785,481

Title: Method for fabricating micromachined structures

Abstract: A method for fabricating micromachined structures is provided. At least one cavity is formed on a substrate and then a dielectric material different from the material of the substrate is filled in the at least one cavity. Next, a circuitry layer including a first etch-resistant layer and a dielectric layer is formed above the at least one cavity filled with the dielectric material. A portion of the circuitry layer exposed by the first etch-resistant layer is then etched. Finally, the dielectric material in the at least one cavity is etched out.

Inventors: Wang; Chuan Wei (Hsin-Chu, TW)

Assignee: PixArt Imaging Inc.

International Classification: C23F 1/00 (20060101)

Expiration Date: 8/31/12018