Patent Number: 7,785,486

Title: Method of etching structures into an etching body using a plasma

Abstract: Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF.sub.3, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.

Inventors: Urban; Andrea (Stuttgart, DE), Laermer; Franz (Weil der Stadt, DE), Breitschwerdt; Klaus (Filderstadt, DE), Becker; Volker (Marxzell, DE)

Assignee: Robert Bosch GmbH

International Classification: G01L 21/30 (20060101); B44C 1/22 (20060101); C23F 1/00 (20060101)

Expiration Date: 8/31/12018