Patent Number: 7,785,526

Title: Imprint alignment method, system, and template

Abstract: An improved lithographic alignment method, system, and template. The method includes creating, within a lithographic subfield, subsequent-layer features which are intentionally offset from their respective previous-layer features, where the intentional offset may vary in magnitude and direction from one subfield to the next. The system includes an imprint lithographic machine and first and second lithography templates where the templates are adapted to enable the machine to form first and second features, respectively, and where a second feature is configured to be deliberately offset from a corresponding first feature. The template set includes at least two templates, one having features which are deliberately offset from corresponding features of another template. Also, a method of manufacturing such a template set.

Inventors: Voisin; Ronald D. (Austin, TX)

Assignee: Molecular Imprints, Inc.

International Classification: B29C 35/08 (20060101); B29C 43/02 (20060101); B29C 33/00 (20060101)

Expiration Date: 8/31/12018