Patent Number: 7,785,546

Title: Apparatus and method for manufacturing high purity polycrystalline silicon

Abstract: An apparatus for manufacturing high purity polycrystalline silicon comprises a vertical reactor, a vaporizer and a fusing evaporator for supplying gaseous silicon chloride and zinc, respectively. The fusing evaporator further comprises a zinc evaporator, a main vertical cylinder part connected to the upper part of the zinc evaporator, a solid trapping pipe inserted in the main vertical cylinder part, a zinc introducing pipe connected to the solid trapping pipe at an angle, a seal pot surrounding the lower portion of the solid trapping pipe, an induction heater surrounding the main vertical cylinder part, and a gas vent pipe connected to the side wall of the zinc evaporator.

Inventors: Namiki; Nobuaki (Kumamoto, JP)

Assignee: Chisso Corporation

International Classification: B01J 19/00 (20060101); C01B 33/02 (20060101)

Expiration Date: 8/31/12018