Patent Number: 7,785,662

Title: Method for manufacturing magnetoresistive element

Abstract: There is provided a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer arranged between the magnetization pinned layer and the magnetization free layer and current paths passing through the insulating layer. The method includes, in producing the spacer layer, depositing a first non-magnetic metal layer forming the current paths, depositing a second metal layer to be converted into the insulating layer on the first non-magnetic metal layer, and performing two stages of oxidation treatments in which a partial pressure of an oxidizing gas in a first oxidation treatment is set to 1/10 or less of a partial pressure of an oxidizing gas in a second oxidation treatment, and the second metal layer being irradiated with an ion beam or a RF plasma of a rare gas in the first oxidation treatment.

Inventors: Fuji; Yoshihiko (Kawasaki, JP), Fukuzawa; Hideaki (Kawasaki, JP), Yuasa; Hiromi (Kawasaki, JP), Iwasaki; Hitoshi (Yokosuka, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: H05H 1/00 (20060101); H01F 41/00 (20060101); H01F 41/22 (20060101)

Expiration Date: 8/31/12018