Patent Number: 7,785,754

Title: Defect repair method for photomask and defect-free photomask

Abstract: A method of repairing a photomask with a depression defect includes providing a photomask including a depression defect on a transparent substrate, forming a protection layer which covers the depression defect, etching a predetermined depth of the transparent substrate of the photomask with the protection layer as the etch mask, and removing the protection layer and the transparent substrate under the unetched protection layer, wherein a defect free photomask is produced.

Inventors: Sim; Hong-seok (Suwon-si, KR), Sung; Moon-gyu (Seoul, KR), Lee; Sang-hyeon (Yongin-si, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: G03F 1/00 (20060101)

Expiration Date: 8/31/12018