Patent Number: 7,785,933

Title: Method for manufacturing semiconductor device

Abstract: To provide a method for manufacturing a highly-reliable semiconductor device, which is not damaged by external local pressure, with a high yield, a semiconductor device is manufactured by forming an element substrate having a semiconductor element formed using a single-crystal semiconductor substrate or an SOI substrate, providing the element substrate with a fibrous body formed from an organic compound or an inorganic compound, applying a composition containing an organic resin to the element substrate and the fibrous body so that the fibrous body is impregnated with the organic resin, and heating to provide the element substrate with a sealing layer in which the fibrous body formed from an organic compound or an inorganic compound is contained.

Inventors: Dozen; Yoshitaka (Tochigi, JP), Sugiyama; Eiji (Tochigi, JP), Ohtani; Hisashi (Tochigi, JP), Tsurume; Takuya (Atsugi, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

International Classification: H01L 21/16 (20060101)

Expiration Date: 8/31/12018