Patent Number: 7,785,935

Title: Manufacturing method for forming an integrated circuit device and corresponding integrated circuit device

Abstract: The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.

Inventors: Bosholm; Ole (Dresden, DE), Lepper; Marco (Dresden, DE), Springer; Goetz (Dresden, DE), Weber; Detlef (Ottendorf-Okrilla, DE), Bonsdorf; Grit (Dresden, DE), Pietzschmann; Frank (Dresden, DE)

Assignee: Qimonda AG

International Classification: H01L 21/82 (20060101); H01L 21/311 (20060101)

Expiration Date: 8/31/12018