Patent Number: 7,785,994

Title: Ion implantation method and semiconductor device manufacturing method

Abstract: In the ion implantation method and semiconductor device manufacturing method relating to the present invention, a disc on which multiple semiconductor substrates are mounted is positioned in the manner that a first angle .beta..sub.1 is made between an X-Y plane perpendicular to an ion beam and a line perpendicular to the Y-axis in a disc rotation plane. In this state, an ion beam is emitted to implant a first conductivity type impurity in the semiconductor substrates while the disc is rotated about a disc rotation axis. Then, the disc is positioned in the manner that a second angle .beta..sub.2 is made between the X-Y plane and a line perpendicular to the Y-axis in the disc rotation plane. In this state, an ion beam is emitted to implant a second conductivity type impurity in the semiconductor substrates while the disc is rotated about the disc rotation axis.

Inventors: Okai; Hideki (Niigata, JP)

Assignee: Panasonic Corporation

International Classification: H01L 21/425 (20060101)

Expiration Date: 8/31/12018